ECH8659
3.5
7
6
ID -- VDS
V
14
13
12
ID -- VGS
VDS=10V
11
5
4
3
10
9
8
7
6
5
2
1
0
VGS=3.0V
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
80
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
IT13723
Ta=25 ° C
70
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT13724
70
60
I =2.0
4.0V, D
,I =
=3.5A
=10.0
60
50
40
30
20
ID=2A
3.5A
50
40
30
20
VG S=
VGS
V GS
A
2.0A
= 4.5V D
V, I D
10
0
10
0
0
2
4
6
8
10
12
14
16
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
7
| y fs | -- ID
IT13725
VDS=10V
3
2
Ambient Temperature, Ta -- ° C
IS -- VSD
IT13726
VGS=0V
5
3
10
7
5
-25
° C
2
1.0
Ta
=-
° C
75
3
2
1.0
7
7
5
25
° C
5
3
2
3
2
0.1
7
0.1
7
5
3
2
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
Drain Current, ID -- A
SW Time -- ID
IT13727
2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
IT13728
f=1MHz
7
5
3
td(off)
tf
1000
7
5
Ciss
2
3
10
7
5
3
2
td(on)
tr
VDD=15V
VGS=10V
2
100
7
5
3
C o ss
Crss
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0
5
10
15
20
25
30
Drain Current, ID -- A
IT13729
Drain-to-Source Voltage, VDS -- V
IT13730
No. A1224-3/7
相关PDF资料
ECH8660-TL-H MOSFET N/P-CH 30V 4.5A ECH8
ECH8661-TL-H MOSFET N/P-CH 30V 7A ECH8
ECH8662-TL-H MOSFET N-CH DUAL 40V 6.5A ECH8
ECH8667-TL-H MOSFET P-CH DUAL 30V 5.5A ECH8
ECH8668-TL-H MOSFET N/P-CH 20V 7.5A ECH8
ECH8671-TL-H MOSFET P-CH DUAL 12V 3.5A ECH8
ECH8672-TL-H MOSFET P-CH DUAL 20V 3.5A ECH8
ECH8675-TL-H MOSFET P-CH DUAL 20V 4.5A ECH8
相关代理商/技术参数
ECH8659-TL-HX 制造商:ON Semiconductor 功能描述:NCH+NCH 4V DRIVE SERIES - Tape and Reel
ECH8660 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
ECH8660_10 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8660-S-TL-H 制造商:ON Semiconductor 功能描述:PCH+NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+NCH 4V DRIVE SERIES
ECH8660-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8661 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
ECH8661-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8662 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications